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Keynote & Invited Speakers

Keynote 1: Current Status and Prospect for EUV Lithography

Prof. Takeo Watanabe, Center for EUVL, Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Japan


Extreme ultraviolet (EUV) lithography which can utilize the single resist process is the most promising lithographic technology for semiconductor electronic devices such as MPU, memory. In the International Electron Device Meeting (IEDM) 2016 which was held in San Francisco, as the fabrication of ULSIs which are going to use for the future Internet of Things (IoT) requires the low cost and low power consumption devices, using the single resist process in high volume manufacturing is strongly required. The technical issues of EUV lithography for high volume manufacturing are 1) EUV light source, 2) EUV resist development, 3) EUV pellicle, and 4) defect free EUV mask development. EUVL is planned to be inset into high volume manufacturing from 2019. Recently, ASML demonstrated EUV LPP source power of 250 W at intermediate focal point, and adapting to NXE-3400B EUV exposure system, 12 inches wafer throughput of 125 wafers per hour is achieved. The current status of and prospect for EUVL will be introduced and discussed.

Keynote 2: A Way to a Semiconductor Solution Provider for the next decade from Successful the first decade in the Semiconductor Industry at Vietnam

President Atsuo Hanami, Renesas Design Vietnam Co., Ltd.


Conducting the feasibility study from 2003 and established in 2004 even when LSI design was still an unfamiliar word with most of Vietnamese people, Renesas Design Vietnam (RVC) was targeted as a full range design center in Vietnam. This presentation shares with audiences our direction, challenges, strategies and improvements to be a semiconductor solution provider for the next decade, as well as the background and expectation on the foundation of RVC, challenges, success and contribution that RVC has experienced through the first decade of development and growth. Finally, we close the presentation with a positive message to engineers who are interested in not only semiconductor industry but also embedded software industry and wish to contribute to the prosperity of the region.

Invited talk 1: An Implementation of Ultra-Low-Standby SRAM using 65 nm Silicon-on-Thin-Box (SOTB) for Smart IoT

Dr. Koji Nii, Renesas Electronics, Japan


Invited talk 2: Single Chip 8K HEVC Decoder Architecture and Implementation

Dr. Masaitsu Nakajima, Fellow Visual Solution Business Unit, Socionext Inc, Japan


To implement 8K Advanced BS receiver system, 8K HEVC decoder SoC is developed as key component. To solve the exceeded required memory bandwidth over physical memory bandwidth limitation issue for realizing 8K decoder, two types of multi-cast write back scheme, including reference data multi-cast write back and output data multi-cast write back, are introduced. 8K HEVC decoder chip is fabricated in 28nm CMOS technology and SIP packaged with eight DDR3 memories.

Invited talk 3: AI, IoT Acceralation with "via-switch" FPGA and High Level Synthesis

Dr. Kazutoshi Wakabayashi, NEC, Japan


Invited talk 4: High-Resolution Micro-magnetic Probe for The Applications of Safety and Security

Dr. Mai-Khanh Nguyen Ngoc, VDEC, Japan


Invited talk 5: Design and SI/PI analysis of High Bandwidth Memory (HBM)  interface in 2.1D System in Package

Dr. Yutaka Uematsu, Hitachi., Ltd, Japan


Invited talk 6: MPEG Media Transport technologies and its Application to Immersive Media Communication Services

Dr. Takayuki Nakachi, Media Innovation Laboratory, NTT Network Innovation Laboratories, NTT, Japan


MPEG Media Transport (MMT) is a next generation media transport standard developed as a part of ISO/IEC 23008. MMT standard specifies technologies for the delivery of coded media data for multimedia services over concatenated heterogeneous packet-based networks including bidirectional IP networks and unidirectional digital broadcasting networks. MMT also supports an Application Layer Forward Error Correction (AL-FEC) codes for reliable delivery in IP network environments. In this paper, we introduce an MMT standard mainly focus on our proposed MMT FireFort-LDGM codes and as its application to immersive media communication.

Invited talk 7: Beat Sensors IoT Technology Suitable for Energy Saving

Prof. Koichiro Ishibashi, Ryohei Takitoge, and Shohei Ishigaki, University of Electro-Communications, Japan


We have proposed IoT beat sensors in which wireless TX send only ID codes, and RX receivers the ID codes. The data acquired by the sensors are recovered by the interval time of the ID code in RX. The ID code transmissions are called as Beats so that the sensors are called as beat sensors. Beat sensor realizes low power, small size, and low cost sensors, which are large advantages as IoT sensors. This paper introduces the concept of the Beat Sensors, and describes Power Beat Sensor, DC Current Beat Sensor for use to reduce the electrical energy in Home and Buildings and so on.

Invited talk 8: Super Steep Subthreshold Slope PN-Body Tied SOI FET for Ultra Low Power IoT Edge Applications

Prof. Jiro Ida, Kanazawa Institute of Technology, Japan


We have proposed a super steep Subthreshold Slope (SS) “PN-Body Tied SOI-FET”. It shows the super steep SS (~35μV/dec) over 3 to 5 decades of the drain current with an ultra-low drain voltage down to 0.1V. We have also improved it to reduce the operating body voltage below 1V and have clarified that the floating body effect of the SOI is a key mechanism for appearance of a super steep SS. The research status on the device was reviewed, here.